MSS39-045-P55 diodes equivalent, p-type silicon schottky diodes.
* Very Low 1/f Noise
* Detector Applications up to 40 GHz
* Chip Beam Lead and Packaged Devices
Description
The MSS39-xxx-x Series of Schottky diodes is fabri.
up to 40 GHz
* Chip Beam Lead and Packaged Devices
Description
The MSS39-xxx-x Series of Schottky diodes is fabricat.
The MSS39-xxx-x Series of Schottky diodes is fabricated on P-Type epitaxial substrates for superior 1/f noise performance in microwave biaseddetector applications up to 40 GHz.
Rev. V1
Chip
Electrical Specifications: TA = 25°C
Model
VBR Min.
V
.
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