* Nanosecond Switching Speed with Low-Cost TTL Logic
* Low Series Resistance
* No Reverse Bias Required for Low Loss
* RoHS* Compliant Description The MGP.

Rev. V1 Electrical Characteristics, TC = +25°C Parameters Units Test Condition MGPN0515-C12 VBR V IR = 10 µA Min.

The MGPN GaAs PIN Diodes are a series of GaAs PIN diodes suitable for high frequency, >26 GHz, switch and high speed modulation applications. Rev. V1 Electrical Characteristics, TC = +25°C Parameters Units Test Condition MGPN0515-C12 VBR V IR =.

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