MGP11N60ED Datasheet | Motorola Semiconductor

MOTOROLA SEMICONDUCTOR TECHNICAL DATA ™Designer's Data Sheet Insulated Gate Bipolar Transistor with Anti-Parallel Diode N- Channel Enhancement- Mode Silicon Gate This Insulated Gate Bipolar Transistor (IGBT) is co- packaged with a soft recovery ultra- fast rectifier and uses an advanced termination scheme to provide an enhanced and reliable high voltage- blocking capability. Its new 600 V IGBT technology is specifically suited for applications requiring both a high tempera- ture short circuit capability and a low VCE(on). It also provides fast switching characteristics and results in efficient operation at high frequencies. Co- packaged IGBTs save space, reduce assembly time and cost. This new E- series introduces an energy efficient, ESD protected, and rugged short circuit device. - Industry Standard TO- 220 Package - High Speed: Eoff = 60 m J per Amp typical at 125°C - High Voltage Short Circuit Capability - 10 ms minimum at 125°C, 400 V - Low On- Voltage -...