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MA4E2160 - GaAs Flip Chip Schottky Barrier Diodes

Download the MA4E2160 datasheet PDF. This datasheet also covers the MA4E1317-MA variant, as both devices belong to the same gaas flip chip schottky barrier diodes family and are provided as variant models within a single manufacturer datasheet.

General Description

The MA4E1317 single, MA4E1318 anti-parallel pair, MA4E1319-1 reverse tee and MA4E2160 unconnected anti-parallel pair are gallium arsenide flip chip Schottky barrier diodes.

Key Features

  • Low Series Resistance.
  • Low Capacitance.
  • High Cutoff Frequency.
  • Silicon Nitride Passivation.
  • Polyimide Scratch Protection.
  • Designed for Easy Circuit Insertion.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (MA4E1317-MA-COM.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
MA4E2037 (MA4E2037 - MA4E2040) GaAs Beam Lead Schottky Barrier Diodes Tyco Electronics
MA4E2039 (MA4E2037 - MA4E2040) GaAs Beam Lead Schottky Barrier Diodes Tyco Electronics
MA4E2040 (MA4E2037 - MA4E2040) GaAs Beam Lead Schottky Barrier Diodes Tyco Electronics
MA4E2054 Surface Mount Low Barrier Schottky Diode Tyco
MA4E2054 Surface Mount Low Barrier Schottky Diode MACOM

Other Datasheets by MACOM Technology Solutions

Part Number Description
MA4E2811 Multi Purpose Axial Leaded Glass Schottky Diodes
MA4E2812-54 Multi Purpose Axial Leaded Glass Schottky Diodes
MA4E1310 GaAs Flip Chip Schottky Barrier Diode
MA4E1317 GaAs Flip Chip Schottky Barrier Diodes
MA4E1318 GaAs Flip Chip Schottky Barrier Diodes

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
GaAs Flip Chip Schottky Barrier Diodes Features • Low Series Resistance • Low Capacitance • High Cutoff Frequency • Silicon Nitride Passivation • Polyimide Scratch Protection • Designed for Easy Circuit Insertion Description and Applications The MA4E1317 single, MA4E1318 anti-parallel pair, MA4E1319-1 reverse tee and MA4E2160 unconnected anti-parallel pair are gallium arsenide flip chip Schottky barrier diodes. These devices are fabricated on OMCVD epitaxial wafers using a process designed for high device uniformity and extremely low parasitics. The diodes are fully passivated with silicon nitride and have an additional layer of polyimide for scratch protection. The protective coatings prevent damage to the junction during automated or manual handling.