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MA4E1310 - GaAs Flip Chip Schottky Barrier Diode

Download the MA4E1310 datasheet PDF. This datasheet also covers the MA4E1310-MA variant, as both devices belong to the same gaas flip chip schottky barrier diode family and are provided as variant models within a single manufacturer datasheet.

General Description

M/A-COM's MA4E1310 is a gallium arsenide flip chip Schottky barrier diode.

This diode is fabricated on a OMCVD epitaxial wafer using a process designed for high device uniformity and extremely low parasitics.

Key Features

  • Low Series Resistance.
  • Low Capacitance.
  • High Cutoff Frequency.
  • Silicon Nitride Passivation.
  • Polyimide Scratch Protection.
  • Designed for Easy Circuit Insertion.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (MA4E1310-MA-COM.pdf) that lists specifications for multiple related part numbers.

Other Datasheets by MACOM Technology Solutions

Part Number Description
MA4E1317 GaAs Flip Chip Schottky Barrier Diodes
MA4E1318 GaAs Flip Chip Schottky Barrier Diodes
MA4E1319-1 GaAs Flip Chip Schottky Barrier Diodes
MA4E1319-2 GaAs Flip Chip Schottky Barrier Diodes
MA4E1339 Silicon Medium Barrier Schottky Diodes
MA4E180 Ceramic Packaged Silicon Schottky Mixer Diodes
MA4E181 Ceramic Packaged Silicon Schottky Mixer Diodes
MA4E182 Ceramic Packaged Silicon Schottky Mixer Diodes
MA4E185 Ceramic Packaged Silicon Schottky Mixer Diodes
MA4E186 Ceramic Packaged Silicon Schottky Mixer Diodes

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
MA4E1310 GaAs Flip Chip Schottky Barrier Diode Features  Low Series Resistance  Low Capacitance  High Cutoff Frequency  Silicon Nitride Passivation  Polyimide Scratch Protection  Designed for Easy Circuit Insertion Description M/A-COM's MA4E1310 is a gallium arsenide flip chip Schottky barrier diode. This diode is fabricated on a OMCVD epitaxial wafer using a process designed for high device uniformity and extremely low parasitics. This device is fully passivated with silicon nitride and has an additional layer of polyimide for scratch protection. The protective coatings prevent damage to the junction during automated or manual handling. The flip chip configuration is suitable for pick and place insertion.