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2N3767 - NPN Power Silicon Transistor

Download the 2N3767 datasheet PDF. This datasheet also covers the 2N3766-MA variant, as both devices belong to the same npn power silicon transistor family and are provided as variant models within a single manufacturer datasheet.

Features

  • Available in JAN, JANTX, JANTXV per MIL-PRF19500/518.
  • TO-66 (TO-213AA) Package Rev. V1 Electrical Characteristics Parameter Test Conditions Symbol Units Off Characteristics Collector - Emitter Breakdown Voltage Collector - Emitter Cutoff Current Collector - Emitter Cutoff Current Collector - Base Cutoff Current Emitter - Base Cutoff Current On Characteristics1 Forward Current Transfer Ratio Collector - Emitter Saturation Voltage Emitter - Base Voltage Dynamic Characteristics I.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (2N3766-MA-COM.pdf) that lists specifications for multiple related part numbers.

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
2N3766 & 2N3767 NPN Power Silicon Transistor Features  Available in JAN, JANTX, JANTXV per MIL-PRF19500/518  TO-66 (TO-213AA) Package Rev. V1 Electrical Characteristics Parameter Test Conditions Symbol Units Off Characteristics Collector - Emitter Breakdown Voltage Collector - Emitter Cutoff Current Collector - Emitter Cutoff Current Collector - Base Cutoff Current Emitter - Base Cutoff Current On Characteristics1 Forward Current Transfer Ratio Collector - Emitter Saturation Voltage Emitter - Base Voltage Dynamic Characteristics IC = 100 mAdc, 2N3766 IC = 100 mAdc, 2N3767 VCE = 60 Vdc, 2N3766 VCE = 80 Vdc, 2N3767 VCE = 80 Vdc, VBE = 1.5 Vdc, 2N3766 VCE = 100 Vdc, VBE = 1.
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