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2N3767 - SILICON NPN POWER TRANSISTORS

Download the 2N3767 datasheet PDF. This datasheet also covers the 2N3766 variant, as both devices belong to the same silicon npn power transistors family and are provided as variant models within a single manufacturer datasheet.

Description

The CENTRAL SEMICONDUCTOR 2N3766 and 2N3767 are silicon NPN power transistors manufactured by the epitaxial base process designed for power amplifier and medium speed switching applications.

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Note: The manufacturer provides a single datasheet file (2N3766-CentralSemiconductor.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

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2N3767 NPN POWER SILICON TRANSISTOR Microsemi Corporation
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Other Datasheets by Central Semiconductor

Part Number Description
2N3762 PNP SILICON TRANSISTOR
2N3763 PNP SILICON TRANSISTOR
2N3766 SILICON NPN POWER TRANSISTORS
2N3700 NPN TRANSISTORS
2N3701 NPN TRANSISTORS

Full PDF Text Transcription

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2N3766 2N3767 SILICON NPN POWER TRANSISTORS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N3766 and 2N3767 are silicon NPN power transistors manufactured by the epitaxial base process designed for power amplifier and medium speed switching applications. MARKING: FULL PART NUMBER TO-66 CASE MAXIMUM RATINGS: (TC=25°C) Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Continuous Base Current Power Dissipation Operating and Storage Junction Temperature Thermal Resistance SYMBOL VCBO VCEO VEBO IC IB PD TJ, Tstg JC 2N3766 80 2N3767 100 60 80 6.0 4.0 2.0 25 -65 to +200 7.
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