* Ultra low RDS(on)
* Ultra low gate charge (typ. Qg = 28nC)
* 100% UIS tested
* RoHS compliant D G S N-Channel MOSFET Pb Absolute Maximum Ratings P.

which require superior power density and outstanding efficiency. Product Summary VDS @ Tj,max 700V RDS(on),max 0.35.

LonFETTM Power MOSFET is fabricated using advanced super junction technology. The resulting device has extremely low on resistance, making it especially suitable for applications which require superior power density and outstanding efficiency. Produ.

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