 High ruggedness  RDS(ON) (Max 1.3 Ω)@VGS=10V  Gate Charge (Typ 38nC)  Improved dv/dt Capability  100% Avalanche Tested General Description  This power MOSFET is pr.

 This power MOSFET is produced with advanced VDMOS technology of LONGTIUMIC.  This technology enable power MOSFET to have better characteristics,  Such as fast switching time, low on resistance, low gate charge and especially excellent avalanche c.

LT7N60

LT700D

LT7170

LT7170-1

LT7200S

LT73

LT770D

LT-1000-SI

LT-1600L

LT-1625S

LT-26A61BU

LT-26A61SU

LT-26AX5

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