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LSIC2SD120E40CC - GEN2 SiC Schottky Diode

General Description

SiC SchottkynaneDdgliagioimbldaexerimevuemrseopreecraotvinegryjucnucrrteionnt,theimghpesruartguerecaopf a1b7i5lit°yC, .

Key Features

  • Positive temperature coefficient for safe operation and ease of paralleling.
  • 175 °C. maximum operating junction temperature.
  • Excellent surge capability.
  • Extremely fast, temperature-independent switching behavior.
  • Dr.

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LSIC2SD120E40CC GEN2 SiC Schottky Diode LSIC2SD120E40CC, 1200 V, 40 A, TO-247-3L RoHS Pb Circuit Diagram TO-247-3L PIN 1 PIN 2 PIN 3 CASE Maximum Ratings Characteristics Repetitive Peak Reverse Voltage DC Blocking Voltage Continuous Forward Current (Per Leg/Component) Non-Repetitive Forward Surge Current (Per Leg) Power Dissipation (Per Leg/Component) Operating Junction Temperature Storage Temperature Soldering Temperature Description This series of silicon carbide (SiC) Schottky diodes has SiC SchottkynaneDdgliagioimbldaexerimevuemrseopreecraotvinegryjucnucrrteionnt,theimghpesruartguerecaopf a1b7i5lit°yC, . This diode series is ideal for applications where improvements in efficiency, reliability, and thermal management are desired.