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LSIC2SD120C08 Datasheet Preview

LSIC2SD120C08 Datasheet

GEN2 SiC Schottky Diode

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LSIC2SD120C08
GEN2 SiC Schottky Diode
LSIC2SD120AC08, 1200 V, 88AA,,TTOO-2-25220-2-2LL(DPAK)
RoHS Pb
Circuit Diagram TO-252-2L ( DPAK )
Case
Pin 1 Pin 2
1
Maximum Ratings
Characteristics
Repetitive Peak Reverse Voltage
DC Blocking Voltage
Continuous Forward Current
Non-Repetitive Forward Surge Current
Power Dissipation
Operating Junction Temperature
Storage Temperature
Soldering Temperature
Description
This series of silicon carbide (SiC) Schottky diodes has
SiC SchottkynaneDdgliagioimbldaexerimevuemrseopreecraotvinegryjucnucrrteionnt,theimghpesruartguerecaopf a1b7i5lit°yC, .
These diodes series are ideal for applications where im-
provements in efficiency, reliability, and thermal manage-
ment are desired.
Features
• Positive temperature
coefficient for safe
operation and ease of
paralleling
• 175 °C maximum
operating junction
temperature
• Excellent surge capability
• Extremely fast,
temperature-independent
switching behavior
• Dramatically reduced
switching losses
compared to Si bipolar
diodes
Applications
• Boost diodes in PFC or
DC/DC stages
• Switch-mode power
supplies
• Uninterruptible power
supplies
• Solar inverters
• Industrial motor drives
• EV charging stations
Environmental
2
• Littelfuse “RoHS” logo = RoHS
RoHS conform
• Littelfuse “HF” logo =
Halogen Free
• Littelfuse “PB-free” logo = Pb
Pb-free lead plating
Symbol
VRRM
VR
IF
IFSM
PTot
TJ
TSTG
Tsold
Conditions
-
Tj = 25 °C
TC = 25 °C
TC = 135 °C
TC = 154 °C
TC = 25 °C, TP = 10 ms, Half sine pulse
TC = 25 °C
TC = 110 °C
-
-
-
Value
1200
1200
24.5
12
8
65
125
54
-55 to 175
-55 to 150
260
Unit
V
V
A
A
W
°C
°C
°C
© 2017 Littelfuse, Inc.
Specifications are subject to change without notice.
Revised: 11/13/17




Littelfuse

LSIC2SD120C08 Datasheet Preview

LSIC2SD120C08 Datasheet

GEN2 SiC Schottky Diode

No Preview Available !

GEN2 SiC Schottky Diode
LSIC2SD120AC08, 1200 V, 88AA,,TTOO-2-25220-2-2LL(DPAK)
Electrical Characteristics
Characteristics
Forward Voltage
Reverse Current
Total Capacitance
Symbol
VF
IR
C
Total Capacitive Charge
QC
Footnote: TJ = +25 °C unless otherwise specified
Thermal Characteristics
SiCCoSndcithionosttky Diode Min.
IF = 8 A, TJ = 25 °C
IF = 8 A, TJ = 175 °C
VR = 1200 V , TJ = 25 °C
VR = 1200 V , TJ = 175 °C
VR = 1 V, f =1 MHz
VR = 400 V, f = 1 MHz
VR = 800 V, f = 1 MHz
VR
VR = 800 V, Qc = C(V)dV
0
-
-
-
-
-
-
-
-
Characteristics
Thermal Resistance
Symbol
RθJC
Conditions
-
Min.
-
Value
Typ.
1.5
2.2
<1
10
454
45
33
47
Value
Typ.
1.2
Max.
1.8
-
100
-
-
-
-
Max.
-
Unit
V
μA
pF
nC
Unit
°C/W
Figure 1: Typical Foward Characteristics
Figure 2: Typical Reverse Characteristics
16
14 TJ = - 55 °C
12
TTJJ
=
=
25
125
°C
°C
TJ = 150 °C
10 TJ = 175 °C
8
6
4
2
0
0 0.5 1 1.5 2 2.5 3 3.5 4
Forward Voltage (V)
1E-4
1E-5
1E-6
1E-7
1E-8
0
TJ = 175 °C
TJ = 150 °C
TJ = 125 °C
TJ = 25 °C
200 400 600 800 1000 1200
Reverse Voltage, VR (V)
© 2017 Littelfuse, Inc.
Specifications are subject to change without notice.
Revised: 11/13/17


Part Number LSIC2SD120C08
Description GEN2 SiC Schottky Diode
Maker Littelfuse
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