LSIC2SD120C08
GEN2 SiC Schottky Diode
LSIC2SD120AC08, 1200 V, 88AA,,TTOO-2-25220-2-2LL(DPAK)
RoHS Pb
Circuit Diagram TO-252-2L ( DPAK )
Case
Pin 1 Pin 2
1
Maximum Ratings
Characteristics
Repetitive Peak Reverse Voltage
DC Blocking Voltage
Continuous Forward Current
Non-Repetitive Forward Surge Current
Power Dissipation
Operating Junction Temperature
Storage Temperature
Soldering Temperature
Description
This series of silicon carbide (SiC) Schottky diodes has
SiC SchottkynaneDdgliagioimbldaexerimevuemrseopreecraotvinegryjucnucrrteionnt,theimghpesruartguerecaopf a1b7i5lit°yC, .
These diodes series are ideal for applications where im-
provements in efficiency, reliability, and thermal manage-
ment are desired.
Features
• Positive temperature
coefficient for safe
operation and ease of
paralleling
• 175 °C maximum
operating junction
temperature
• Excellent surge capability
• Extremely fast,
temperature-independent
switching behavior
• Dramatically reduced
switching losses
compared to Si bipolar
diodes
Applications
• Boost diodes in PFC or
DC/DC stages
• Switch-mode power
supplies
• Uninterruptible power
supplies
• Solar inverters
• Industrial motor drives
• EV charging stations
Environmental
2
• Littelfuse “RoHS” logo = RoHS
RoHS conform
• Littelfuse “HF” logo =
Halogen Free
• Littelfuse “PB-free” logo = Pb
Pb-free lead plating
Symbol
VRRM
VR
IF
IFSM
PTot
TJ
TSTG
Tsold
Conditions
-
Tj = 25 °C
TC = 25 °C
TC = 135 °C
TC = 154 °C
TC = 25 °C, TP = 10 ms, Half sine pulse
TC = 25 °C
TC = 110 °C
-
-
-
Value
1200
1200
24.5
12
8
65
125
54
-55 to 175
-55 to 150
260
Unit
V
V
A
A
W
°C
°C
°C
© 2017 Littelfuse, Inc.
Specifications are subject to change without notice.
Revised: 11/13/17
