L2SD2114KWLT1G transistor equivalent, epitaxial planar type npn silicon transistor.
1) High DC current gain.
hFE = 1200 (Typ.) 2) High emitter-base voltage.
VEBO =12V (Min.) www.DataSheet4U.com3) Low VCE (sat).
VCE (sat) = 0.18V (Typ.) (IC / IB = 500mA /.
Image gallery
TAGS
Manufacturer
Related datasheet
Download (Size : 109.27KB)