L2SD2114KVLT1G transistor equivalent, epitaxial planar type npn silicon transistor.
1) High DC current gain.
hFE = 1200 (Typ.) 2) High emitter-base voltage.
VEBO =12V (Min.) www.DataSheet4U.com3) Low VCE (sat).
VCE (sat) = 0.18V (Typ.) (IC / IB = 500mA /.
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