L2SD1781KRLT1G Features
* 1) Very low VCE(sat). VCE(sat) t 0.4 V (Typ.) (IC / IB = 500mA / 50mA) 2) High current capacity in compact package. 3) Complements the L2SB1197K
* LT1 4) Pb Free Package is Available. FStructure Epitaxial planar type NPN silicon transistor FAbsolute maximum ratings (Ta = 25_C) L2SD1781K
* LT1
L2SD1781KRLT1G, L2SD1781KxLT1 Datasheet
Datasheet Details
L2SD1781KRLT1G, L2SD1781KxLT1
Leshan Radio Company
126.11 KB
Medium power transistor.
This datasheet PDF includes multiple part numbers: L2SD1781KRLT1G, L2SD1781KxLT1.
Please refer to the document for exact specifications by model.
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