logo

L2SC4226T3G Datasheet, Leshan Radio Company

L2SC4226T3G transistor equivalent, high-frequency amplifier transistor.

L2SC4226T3G Avg. rating / M : 1.0 rating-13

datasheet Download

L2SC4226T3G Datasheet

Features and benefits


* Low Noise NF = 1.2 dB TYP. @ f = 1 GHz, VCE = 3 V, IC = 7 mA
* High Gain |S21e|2 = 9.0 dB TYP. @ f = 1 GHz, VCE = 3 V, IC = 7 mA
* Small Mini Mold Package E.

Application

Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. FEATURES
* Low Noise NF.

Description

The L2SC4226T1G is a low supply voltage transistor designed for VHF, UHF low noise amplifier. It is suitable for a high density surface mount assembly since the transistor has been applied small mini mold package. We declare that the material of prod.

Image gallery

L2SC4226T3G Page 1 L2SC4226T3G Page 2 L2SC4226T3G Page 3

TAGS

L2SC4226T3G
High-Frequency
Amplifier
Transistor
L2SC4226T1
L2SC4226T1G
L2SC4226QT1
Leshan Radio Company

Since 2006. D4U Semicon.   |   Contact Us   |   Privacy Policy   |   Purchase of parts