Datasheet4U Logo Datasheet4U.com

L2SC4226T1G - High-Frequency Amplifier Transistor

Description

noise amplifier.

has been applied small mini mold package.

We declare that the material of product compliance with RoHS requirements.

Features

  • Low Noise NF = 1.2 dB TYP. @ f = 1 GHz, VCE = 3 V, IC = 7 mA.
  • High Gain |S21e|2 = 9.0 dB TYP. @ f = 1 GHz, VCE = 3 V, IC = 7 mA.
  • Small Mini Mold Package EIAJ: SC-70 Driver Marking L2SC4226T1G;S-L2SC4226T1G= R2 Ordering Information Device L2SC4226T1G S-L2SC4226T1G L2SC4226T3G S-L2SC4226T3G Marking R2 R2 Shipping 3000/Tape&Reel 10000/Tape&Reel The information in this document is subject to change without notice. Rev. O 1/5 LESHAN RADIO.

📥 Download Datasheet

Datasheet Details

Part number L2SC4226T1G
Manufacturer Leshan Radio Company
File Size 184.17 KB
Description High-Frequency Amplifier Transistor
Datasheet download datasheet L2SC4226T1G Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
L2SC3838NLT1G High-Frequency Amplifier LRC
L2SA1576AQLT1G General Purpose Transistors LRC
L2SA1576AQLT3G General Purpose Transistors LRC
L2SA1576AQT1G General Purpose Transistors LRC
L2SK3018WT1G N-channel MOSFET LRC

Other Datasheets by Leshan Radio Company

Part Number Description
L2SC4226T1 High-Frequency Amplifier Transistor
L2SC4226T3G High-Frequency Amplifier Transistor
L2SC4226QT1 High-Frequency Amplifier Transistor
L2SC4081QT1 General Purpose Transistors NPN Silicon
L2SC4081QT1G General Purpose Transistors

Full PDF Text Transcription

Click to expand full text
LESHAN RADIO COMPANY, LTD. L2SC4226T1G S-L2SC4226T1G 3 1 2 SC-70/SOT-323 DESCRIPTION The L2SC4226T1G is a low supply voltage transistor designed for VHF, UHF low noise amplifier. It is suitable for a high density surface mount assembly since the transistor has been applied small mini mold package. We declare that the material of product compliance with RoHS requirements. S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. FEATURES • Low Noise NF = 1.2 dB TYP. @ f = 1 GHz, VCE = 3 V, IC = 7 mA • High Gain |S21e|2 = 9.0 dB TYP.
Published: |