L2SC3356LT1 transistor equivalent, high-frequency amplifier transistor.
* Low Noise and High Gain NF = 1.1 dB TYP., Ga = 11 dB TYP. @VCE = 10 V, IC = 7 mA, f = 1.0 GHz
* High Power Gain MAG = 13 dB TYP. @VCE = 10 V, IC = 20 mA, f = 1..
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The L2SC3356LT1 is an NPN silicon epitaxial transistor designed for It has dynamic range and good current characteristic.
low noise amplifier at VHF, UHF and CATV band.
SOT-23
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* Low Noise and High Gain NF = 1.
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