D TrenchFETr Power MOSFET: 1.8-V Rated D Gate-Source ESD Protected: 2000 V D High-Side Switching D Low On-Resistance: 1.2 W D Low Threshold: 0.8 V (typ) D Fast Switching .

Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. BENEFITS D Ease in Driving S.

S-LSI1013LT1G

S-LSI1012LT1G

S-LSI1012N3T5G

S-LSI1012XT1G

S-L1SS360TT1G

S-L1SS400CST5G

S-L1SS400T1G

S-L2980

S-L2985

S-L2N7002DMT1G

S-L2N7002DW1T1G

S-L2N7002EM3T5G

S-L2N7002FDW1T1G

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