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S-LSI1012LT1G Datasheet

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LRC · S-LSI1012LT1G File Size : 440.11KB · 2 hits

Features and Benefits

D TrenchFETr Power MOSFET: 1.8-V Rated D Gate-Source ESD Protected: 2000 V D High-Side Switching D Low On-Resistance: 0.7 W D Low Threshold: 0.8 V (typ) D Fast Switching Speed: 10 ns D S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qua.

S-LSI1012LT1G S-LSI1012LT1G S-LSI1012LT1G
TAGS
N-Channel
V
G-S
MOSFET
S-LSI1012LT1G
S-LSI1012N3T5G
S-LSI1012XT1G
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