S-LSI1012LT1G - N-Channel 1.8-V (G-S) MOSFET

LRC

Key Features

D TrenchFETr Power MOSFET: 1.8-V Rated D Gate-Source ESD Protected: 2000 V D High-Side Switching D Low On-Resistance: 0.7 W D Low Threshold: 0.8 V (typ) D Fast Switching Speed: 10 ns D S- Prefix for Automotive and Other.

S-LSI1012LT1G n-channel 1.8-v (g-s) mosfet by LRC - Datasheet Preview

Datasheet Details

Part number	S-LSI1012LT1G
Manufacturer	LRC
File Size	440.11 KB
Description	N-Channel 1.8-V (G-S) MOSFET
Datasheet	S-LSI1012LT1G Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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LESHAN RADIO COMPANY, LTD. N-Channel 1.8-V (G-S) MOSFET FEATURES D TrenchFETr Power MOSFET: 1.8-V Rated D Gate-Source ESD Protected: 2000 V D High-Side Switching D Low On-Resistance: 0.7 W D Low Threshold: 0.8 V (typ) D Fast Switching Speed: 10 ns D S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.