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S-LP2305DSLT1G - P-Channel MOSFET

Key Features

  • Advanced trench process technology High Density Cell Design For Ultra Low On-Resistance Fully Characterized Avalanche Voltage and Current Improved Shoot-Through FOM we declare that the material of product compliance with RoHS requirements . S- Prefix for Automotive and Other.

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Datasheet Details

Part number S-LP2305DSLT1G
Manufacturer LRC
File Size 303.85 KB
Description P-Channel MOSFET
Datasheet download datasheet S-LP2305DSLT1G Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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LESHAN RADIO COMPANY, LTD. 8V P-Channel Enhancement-Mode MOSFET VDS= -8V RDS(ON), Vgs@-4.5V, Ids@"3.5A = 68 mΩ RDS(ON), Vgs@-2.5V, Ids@"3A = 81 mΩ RDS(ON), Vgs@-1.8V, Ids@"2A = 118 mΩ Features Advanced trench process technology High Density Cell Design For Ultra Low On-Resistance Fully Characterized Avalanche Voltage and Current Improved Shoot-Through FOM we declare that the material of product compliance with RoHS requirements . S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.