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S-LP3401LT1G - P-Channel MOSFET

Features

  • Advanced trench process technology High Density Cell Design For Ultra Low On-Resistance S- Prefix for Automotive and Other.

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Datasheet Details

Part number S-LP3401LT1G
Manufacturer LRC
File Size 290.09 KB
Description P-Channel MOSFET
Datasheet download datasheet S-LP3401LT1G Datasheet

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Full PDF Text Transcription

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LESHAN RADIO COMPANY, LTD. 30V P-Channel Enhancement-Mode MOSFET LP3401LT1G S-LP3401LT1G VDS (V) = -30V RDS(ON) < 70mΩ (VGS = -10V) RDS(ON) < 80mΩ (VGS = -4.5V) RDS(ON) < 120mΩ (VGS = -2.5V) FEATURES Advanced trench process technology High Density Cell Design For Ultra Low On-Resistance S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.
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