* RDS(ON) ≦100mΩ@VGS=10V
* RDS(ON) ≦130mΩ@VGS=4.5V
* RDS(ON) ≦200mΩ@VGS=3.3V
* Super high density cell design for extremely low RDS(ON)
* Exceptional .

Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. APPLICATIONS
* Power Ma.

S-LN2302ALT1G

S-LN4812LT1G

S-LNST3904F3T5G

S-LNST3906F3T5G

S-LNTA4001NT1G

S-LNTA7002NT1G

S-LNTK3043NT5G

S-LNTK3043PT5G

S-LNTK4003M3T5G

S-LNTR4003NLT1G

S-LNTS4409NWT1G

S-L1SS360TT1G

S-L1SS400CST5G

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