S-LN4812LT1G
Features
Advanced trench process technology High Density Cell Design For Ultra Low On-Resistance High Power and Current Handling Capability S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.
▼ Simple Drive Requirement
▼ Small Package Outline
▼ Surface Mount Device
Ordering Information
Device
LN4812LT1G S-LN4812LT1G
LN4812LT3G S-LN4812LT3G
Marking N48 N48
Shipping 3000/Tape&Reel 10000/Tape&Reel
LN4812LT1G S-LN4812LT1G
1 2
SOT- 23 (TO- 236AB)
- Channel 3
Maximum Ratings and Thermal Characteristics (TA = 25o C unless otherwise noted)
Symbol
Parameter
Limit
VDS Drain-Source Voltage VGS Gate-Source Voltage ID Continuous Drain Current IDM Pulsed Drain Current 1)
PD Maximum Power Dissipation
TA = 25o C TA = 75o C
30 ± 20
6 30 1.4 0.8
TJ, Tstg
Operating Junction and Storage Temperature Range
RθJC Junction-to-Case Thermal Resistance
RθJA Junction-to-Ambient Thermal Resistance (PCB...
