LSI1012XT1G mosfet equivalent, n-channel 1.8-v (g-s) mosfet.
D TrenchFETr Power MOSFET: 1.8-V Rated D Gate-Source ESD Protected: 2000 V D High-Side Switching D Low On-Resistance: 0.7 W D Low Threshold: 0.8 V (typ) D Fast Switching .
Requiring
Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.
BENEFITS D Ease in Driving S.
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