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LSI1013XT1G LRC

LSI1013XT1G P-Channel 1.8-V (G-S) MOSFET

LSI1013XT1G Avg. rating / M : star-13

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LSI1013XT1G Datasheet

Features and benefits

D TrenchFETr Power MOSFET: 1.8-V Rated D Gate-Source ESD Protected: 2000 V D High-Side Switching D Low On-Resistance: 1.2 W D Low Threshold: 0.8 V (ty.

Application

Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. BENEFITS.

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TAGS
LSI1013XT1G
P-Channel
1.8-V
G-S
MOSFET
LSI1013LT1G
LSI1012LT1G
LSI1012N3T5G
LRC
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