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LN2308LT1G - 60V N-Channel Enhancement-Mode MOSFET

Features

  • RDS(ON) ≦100mΩ@VGS=10V.
  • RDS(ON) ≦130mΩ@VGS=4.5V.
  • RDS(ON) ≦200mΩ@VGS=3.3V.
  • Super high density cell design for extremely low RDS(ON).
  • Exceptional on-resistance and maximum DC current capability.
  • Capable doing Cu wire bonding.
  • S- Prefix for Automotive and Other.

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Datasheet preview – LN2308LT1G

Datasheet Details

Part number LN2308LT1G
Manufacturer LRC
File Size 1.85 MB
Description 60V N-Channel Enhancement-Mode MOSFET
Datasheet download datasheet LN2308LT1G Datasheet
Additional preview pages of the LN2308LT1G datasheet.

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Full PDF Text Transcription

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LESHAN RADIO COMPANY, LTD. 60V N-Channel Enhancement-Mode MOSFET FEATURES ● RDS(ON) ≦100mΩ@VGS=10V ● RDS(ON) ≦130mΩ@VGS=4.5V ● RDS(ON) ≦200mΩ@VGS=3.3V ● Super high density cell design for extremely low RDS(ON) ● Exceptional on-resistance and maximum DC current capability ● Capable doing Cu wire bonding ● S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.
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