LN2308LT1G mosfet equivalent, 60v n-channel enhancement-mode mosfet.
* RDS(ON) ≦100mΩ@VGS=10V
* RDS(ON) ≦130mΩ@VGS=4.5V
* RDS(ON) ≦200mΩ@VGS=3.3V
* Super high density cell design for extremely low RDS(ON)
* Exceptional .
Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.
APPLICATIONS
* Power Ma.
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