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LN2307 - P-Channel Enhancement Mode Field Effect Transistor

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LN2307 P-Channel Enhancement Mode Field Effect Transistor by natlinear - Datasheet Preview — Datasheet preview – LN2307

Datasheet Details

Part number	LN2307
Manufacturer	natLinear
File Size	426.17 KB
Description	P-Channel Enhancement Mode Field Effect Transistor
Datasheet	LN2307 Datasheet
Additional preview pages of the LN2307 datasheet.

Product details

Description

VDSS -20V Product Summary ID -0.45A -0.35A RDS(ON)(mΩ)TYP 300 @ VGS=-4.5V 450 @ VGS=-2.5V

Features

Super high dense cell design for low RDS(ON).
Rugged and reliable.
Simple drive requirement.
SOT-23-3L/B package.
Package.
SOT-23-3L/B 3 D S.
Ordering Information GS 12 SOT-23-3L/B (Top View) G D Part Number LN2307 Storage Temperature -55°C to +150°C Package SOT-23-3L/B Devices Per Reel 3000.
Absolute Maximum Ratings parameter Drain-source voltage Gate-source voltage Coutinuous drain current (Tj=150℃) TA=25℃ TA=80℃ Pulsed drain current D.

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Published: Dec 4, 2018 |