LHIR3333-PF diodes equivalent, infrared emitting diodes.
1. High radiant intensity. 2. Suitable for pulsed applications. 3. Low average degradation.
Descriptions:
The LHIR3333-PFseries are high power solution grown efficiency.
3. Low average degradation.
Descriptions:
The LHIR3333-PFseries are high power solution grown efficiency Gallium Arsen.
:
The LHIR3333-PFseries are high power solution grown efficiency Gallium Arsenide infrared emitting diodes encapsulated in water clear plastic T-1 3/4 package individually
Device Selection Guide:
PART NO LHIR3333-PF
MATERIAL GaAIAs/GaAs
LENS COLO.
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