* RDS(ON) =2.3Ω@ VGS=10V
* Low gate charge (typical 13.5nC)
* High ruggedness
* Fast switching capability
* Avalanche energy specified
* Improved .

such as switching regulators, switching converters, solenoid, motor drivers, relay drivers. 2. Features
* RDS(ON) =.

The KIA4N60H N-Channel enhancement mode silicon gate power MOSFET is designed for high voltage, high speed power switching applications such as switching regulators, switching converters, solenoid, motor drivers, relay drivers. 2. Features
* RDS.

4N60

4N60-C

4N60-CB

4N60-E

4N60-N

4N60-Q

4N60-R

4N60-S

4N60-TA5

4N600

4N60A

4N60AF

4N60AS

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