n RDS(on)=0.32Ω @ VGS=10V n Low gate charge ( typical 45nC) n Fast switching capability n Avalanche energy specified n Improved dv/dt capability 3. Pin configuration Pin.

This power MOSFET is produced using KIA advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the aval.

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