KHB2D0N60P Features
* VDSS= 600V, ID= 2.0A Drain-Source ON Resistance : RDS(ON)=5.0 @VGS = 10V Qg(typ.) = 12.5nC K M L J D N N P H 1 2 3 DIM MILLIMETERS _ 0.2 9.9 + A 15.95 MAX B 1.3+0.1/-0.05 C _ 0.1 D 0.8 + _ 0.2 E 3.6 + _ 0.1 F 2.8 + 3.7 G H 0.5+0.1/-0.05 1.5 I _ 0.3 13.08 + J K 1.46 _ 0.1 1.4 + L _ 0.1 1.27+ M
KHB2D0N60F_KECsemiconductor.pdf
Datasheet Details
KHB2D0N60P, KHB2D0N60F
KEC semiconductor
103.36 KB
(khb2d0n60f/p) n-channel mos field effect transistor.
This datasheet PDF includes multiple part numbers: KHB2D0N60P, KHB2D0N60F.
Please refer to the document for exact specifications by model.
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KHB2D0N60P Distributor
