KHB2D0N60F2 mosfet equivalent, n-channel mosfet.
VDSS= 600V, ID= 2.0A Drain-Source ON Resistance : RDS(ON)=5.0 @VGS = 10V Qg(typ.) = 10.9nC
K M L J D N N
P
F G H I J
15.95 MAX 1.3+0.1/-0.05 _ 0.1 0.8 + _ 0.2 3.6 + _.
KHB2D0N60P/F/F2
N CHANNEL MOS FIELD EFFECT TRANSISTOR
KHB2D0N60P
A O C F E G B Q I
DIM MILLIMETERS _ 0.2 9.9 + A B C D E
This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and exce.
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