KP8N65I mosfet equivalent, n-channel mosfet.
VDSS=650V, ID=8A Drain-Source ON Resistance : RDS(ON)(Max)=0.62 @VGS=10V Qg(typ.)= 21nC
MAXIMUM RATING (Tc=25 )
CHARACTERISTIC
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RATING
Drain-Source Voltage Gate.
This Super Junction MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for active power factor correction and switching mode power supplie.
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