KP8N60D mosfet equivalent, n-channel mosfet.
VDSS=600V, ID=8A Drain-Source ON Resistance : RDS(ON)(Max)=0.58 @VGS=10V Qg(typ.)= 16nC
MAXIMUM RATING (Tc=25 )
CHARACTERISTIC
SYMBOL
RATING
Drain-Source Voltage
Gat.
This Super Junction MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for active power factor correction and switching mode power supplie.
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