KMB7D0DN40QB mosfet equivalent, dual n-channel mosfet.
VDSS=40V, ID=7A. Drain to Source on Resistance. RDS(ON)=25m (Max.) @VGS=10V RDS(ON)=45m (Max.) @VGS=4.5V
Maximum Ratings (Ta=25 Unless otherwise noted)
CHARACTERISTIC
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This Trench MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for power management in PC, portable equipment and battery powered systems.
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