KMB6D0DN35QB datasheet, mosfet equivalent, KEC

Features and benefits

VDSS=35V, ID=6A. Drain-Source ON Resistance. RDS(ON)=28m (Max.) @VGS=10V RDS(ON)=42m (Max.) @VGS=4.5V Super High Dense Cell Design Very fast switching KMB6D0DN35QB Dual .

Description

This Trench MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for DC/DC Converters. FEATURES VDSS=35V, ID=6A. Drain-Source ON Resistance. .

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