KMB3D5N40SA mosfet equivalent, n-channel mosfet.
VDSS=40V, ID=3.5A Drain-Source ON Resistance RDS(ON)=45m (Max.) @ VGS=10V RDS(ON)=62m (Max.) @ VGS=4.5V Super High Dense Cell Design
KMB3D5N40SA
N-Ch Trench MOSFET
E L .
This Trench MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for Load switch and Back-Light Inverter.
FEATURES VDSS=40V, ID=3.5A Drain-So.
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