KF9N50P mosfet equivalent, n-channel mosfet.
VDSS(Min.)= 500V, ID= 9A RDS(ON)=0.75 Qg(typ.) =19nC (Max) @VGS =10V
KF9N50P/F
N CHANNEL MOS FIELD EFFECT TRANSISTOR
KF9N50P
DIM
MAXIMUM RATING (Tc=25 )
CHARACTERISTI.
This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for electronic ballast and switching mode power supplies. FEATURES
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