KF9N50F datasheet, mosfet equivalent, KEC

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Features and benefits

VDSS(Min.)= 500V, ID= 9A RDS(ON)=0.75 Qg(typ.) =19nC (Max) @VGS =10V KF9N50P/F N CHANNEL MOS FIELD EFFECT TRANSISTOR KF9N50P DIM MAXIMUM RATING (Tc=25 ) CHARACTERISTI.

Description

This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for electronic ballast and switching mode power supplies. FEATURES VD.

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