KF8N60P transistor equivalent, n-channel mos field effect transistor.
VDSS=600V, ID=8A Drain-Source ON Resistance : RDS(ON)(Max)=1.05 @VGS=10V Qg(typ.)= 24nC
MAXIMUM RATING (Tc=25 )
CHARACTERISTIC
RATING SYMBOL
KF8N60P KF8N60F
Drain-Sou.
This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for active power factor correction and switching mode power supplies.
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