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KF8N60F - N-CHANNEL MOS FIELD EFFECT TRANSISTOR

Download the KF8N60F datasheet PDF. This datasheet also covers the KF8N60P variant, as both devices belong to the same n-channel mos field effect transistor family and are provided as variant models within a single manufacturer datasheet.

Description

This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics.

It is mainly suitable for active power factor correction and switching mode power supplies.

Features

  • VDSS=600V, ID=8A Drain-Source ON Resistance : RDS(ON)(Max)=1.05 @VGS=10V Qg(typ. )= 24nC.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (KF8N60P-KEC.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number KF8N60F
Manufacturer KEC
File Size 75.94 KB
Description N-CHANNEL MOS FIELD EFFECT TRANSISTOR
Datasheet download datasheet KF8N60F Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
SEMICONDUCTOR TECHNICAL DATA KF8N60P/F N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for active power factor correction and switching mode power supplies. FEATURES VDSS=600V, ID=8A Drain-Source ON Resistance : RDS(ON)(Max)=1.05 @VGS=10V Qg(typ.)= 24nC MAXIMUM RATING (Tc=25 ) CHARACTERISTIC RATING SYMBOL KF8N60P KF8N60F Drain-Source Voltage VDSS 600 Gate-Source Voltage VGSS 30 @TC=25 Drain Current @TC=100 Pulsed (Note1) Single Pulsed Avalanche Energy (Note 2) Repetitive Avalanche Energy (Note 1) Peak Diode Recovery dv/dt (Note 3) ID IDP EAS EAR dv/dt 8 8* 5 5* 20 20* 230 14.7 4.
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