KF6N60P transistor equivalent, n-channel mos field effect transistor.
VDSS(Min.)= 600V, ID= 6A RDS(ON)=1.4 (Max) @VGS =10V Qg(typ.) =16nC
MAXIMUM RATING (Tc=25 )
CHARACTERISTIC
Drain-Source Voltage
Gate-Source Voltage
@TC=25
Drain Cur.
This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for electronic ballast and switching mode power supplies.
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