KF6N60I datasheet, transistor equivalent, KEC

Features and benefits

VDSS(Min.)= 600V, ID= 5A RDS(ON)=1.4 (Max) @VGS =10V Qg(typ.) =16nC 1 2 3 KF6N60D/I N CHANNEL MOS FIELD EFFECT TRANSISTOR KF6N60D A C K D L B H G F F J E N M DIM.

Description

This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for electronic ballast and switching mode power supplies. FEATURES VD.

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