KF3N80F transistor equivalent, n channel mos field effect transistor.
VDSS=800V, ID=3A Drain-Source ON Resistance : RDS(ON)(Max)=4.2 @VGS=10V Qg(typ.)=12nC
MAXIMUM RATING (Tc=25 )
CHARACTERISTIC
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Drain-Source Voltage Gate-Source V.
This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for active power factor correction and switching mode power supplies.
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