KF3N50DS Datasheet, KEC

VDSS= 500V, ID= 2.5A Drain-Source ON Resistance : RDS(ON)=2.5 Qg(typ) = 7.50nC (Max) @VGS = 10V trr(typ) = 120ns (KF3N50DS) trr(typ) = 300ns (KF3N50DZ) MAXIMUM RATING.

This planar stripe MOSFET has better characteristics, such as fast switching time, fast reverse recovery time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for electronic ballast and switching mod.