KF16N50P transistor equivalent, n-channel mos field effect transistor.
VDSS=500V, ID=16A Drain-Source ON Resistance : RDS(ON)(Max)=0.36 @VGS=10V Qg(typ.)= 40.8nC
MAXIMUM RATING (Tc=25 )
CHARACTERISTIC
RATING SYMBOL
KF16N50P KF16N50F
Drai.
This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for active power factor correction and switching mode power supplies.
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