KF13N60N transistor equivalent, n channel mos field effect transistor.
VDSS(Min.)= 600V, ID= 13A Drain-Source ON Resistance : RDS(ON)=0.56(Max.) Qg(typ.) =36nC @VGS =10V
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MAXIMUM RATING (Tc=25
CHARACTERISTIC Drain-.
This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for switching mode power supplies.
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KF13N60N
N CHANNEL MOS FIELD EF.
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