7D5N60F1 khb7d5n60f1 equivalent, khb7d5n60f1.
VDSS=600V, ID=7.5A Drain-Source ON Resistance : RDS(ON)=1.2 @VGS=10V
K M L J D N N
P
H
Qg(typ.)= 32.5nC
DIM MILLIMETERS _ 0.2 9.9 + A 15.95 MAX B 1.3+0.1/-0.05 C _ 0.
KHB7D5N60P1/F1
N CHANNEL MOS FIELD EFFECT TRANSISTOR
KHB7D5N60P1
This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable f.
Image gallery
TAGS
Manufacturer
Related datasheet
Download (Size : 885.10KB)