7D0N65F1 khb7d0n65f1 equivalent, khb7d0n65f1.
VDSS=650V, ID=7A Drain-Source ON Resistance : RDS(ON)=1.4 @VGS=10V
K M L J D N N
P
Qg(typ.)= 32nC
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H
MAXIMUM RATING (Tc=25
CHARACTERISTIC Drain-So.
KHB7D0N65P1/F1
N CHANNEL MOS FIELD EFFECT TRANSISTOR
KHB7D0N65P1
This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable f.
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