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RB751V-40 Datasheet Preview

RB751V-40 Datasheet

Silicon Epitaxial Planar Schottky Barrier Diode

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Features
* Small surface mounting type
* Low reverse current and low forward voltage
* High reliability
* High speed switching
* Marking Code: "S8"
RB751V-40
Silicon Epitaxial Planar Schottky Barrier Diode
A
C
B DE
G
F
Maximum Ratings (TA=25unless otherwise noted)
Parameter
Peak Reverse Voltage
Reverse Voltage
Mean Rectifying Current
Peak Forward Surge Current (60 Hz for 1 Cyc.)
Junction Temperature
Storage Temperature Range
SOD-323F
INCHES
MM
DIM
MIN MAX MIN MAX
A
0.091
0.110
2.30
2.80
B
0.045
0.053
1.15
1.35
C
0.063
0.071
1.60
1.80
D
0.010
0.016
0.25
0.40
E
0.031
0.043
0.80
1.10
F
0.004
0.006
0.10
0.15
G
0.016
0.024
0.41
0.61
Symbol
VRM
VR
IO
IFSM
Tj
Tstg
Value
40
30
30
200
125
- 40 to + 125
Unit
V
V
mA
mA
Version: 6.1
www.jgdsemi.com




JGD

RB751V-40 Datasheet Preview

RB751V-40 Datasheet

Silicon Epitaxial Planar Schottky Barrier Diode

No Preview Available !

RB751V-40
Silicon Epitaxial Planar Schottky Barrier Diode
Electrical Characteristics (TA=25unless otherwise noted)
Parameter
Forward Voltage
at IF = 1 mA
Reverse Current
at VR = 30 V
Capacitance Between Terminals
at VR = 1 V, f = 1 MHz
Symbol
VF
IR
CT
Typ.
-
-
2
Max.
0.37
0.5
-
Unit
V
µA
pF
Ratings and Characteristic Curves
Version: 6.1
www.jgdsemi.com


Part Number RB751V-40
Description Silicon Epitaxial Planar Schottky Barrier Diode
Maker JGD
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RB751V-40 Datasheet PDF






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